Method for improved dynamic range of BCMD image sensors

Television – Camera – system and detail – Solid-state image sensor

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348307, H04N 314

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active

053350154

ABSTRACT:
The dynamic range of an image array photosite is improved by, first, turning on a column clamp transistor having a source coupled to a photosite transistor source and a drain coupled to a photosite transistor drain, wherein the column clamp transistor is turned on by a column clamp transistor gate voltage; then decreasing a current supplied to a column sense line below a quiescent value, wherein the column sense line is coupled to the photosite transistor source; then turning on the photosite transistor by a photosite transistor gate voltage; then turning off the photosite transistor and the column clamp transistor at substantially the same time; then increasing the current above the quiescent value; and then returning the current to the quiescent value.

REFERENCES:
patent: 4189070 (1989-04-01), Hynecek
patent: 4901129 (1990-02-01), Hynecek
patent: 5083016 (1992-01-01), Wyles et al.
patent: 5093727 (1992-03-01), Kakinuma et al.
patent: 5128534 (1992-07-01), Wyles
A Bulk Charge Modulated Device (BCMD) Image Sensor, Neal Cooper, et al., Image Technology, TI Technical, Journal, Sep.-Oct. 1991, pp. 14-19.
BCMD-An Improved Photosite Structure for High-Density Image Sensors, IEEE Transactions on Electron Devices, vol. 38, No. 5, May 1991. Jaroslav Hynecek, pp. 1011-1020.

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