Method for implementation of back-illuminated CMOS or CCD...

Details Method for implementation of back-illuminated CMOS or CCD... Method for implementation of back-illuminated CMOS or CCD...

2005-09-13

2008-09-16

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S057000, C438S149000, C257SE33068

Reexamination Certificate

active

07425460

ABSTRACT:
A method for implementation of back-illuminated CMOS or CCD imagers. An oxide layer buried between silicon wafer and device silicon is provided. The oxide layer forms a passivation layer in the imaging structure. A device layer and interlayer dielectric are formed, and the silicon wafer is removed to expose the oxide layer.

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