Method for implanting atomic species through an uneven...

Details Method for implanting atomic species through an uneven... Method for implanting atomic species through an uneven...

2007-09-04

2007-09-04

Lee, Calvin (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

C438S517000

Reexamination Certificate

active

11261785

ABSTRACT:
A method for implanting atomic species through an uneven surface of a semiconductor layer. The technique includes applying a covering layer upon the uneven surface in an amount sufficient and in a manner to increase surface uniformity. The method also includes implanting atomic species through the covering layer and uneven surface to obtain a more uniform depth of implantation of the atomic species in the layer.

REFERENCES:
patent: 5906708 (1999-05-01), Robinson et al.
patent: 6100166 (2000-08-01), Sakaguchi et al.
patent: 6274439 (2001-08-01), Ito
patent: 6326279 (2001-12-01), Kakizaki et al.
patent: 6867067 (2005-03-01), Ghyselen et al.
patent: 04-168764 (1992-06-01), None

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