Method for imaging electrical barrier layers such as pn-junction

Details Method for imaging electrical barrier layers such as pn-junction Method for imaging electrical barrier layers such as pn-junction

1984-04-12

1987-02-24

Wise, Edward J.

Boots, shoes, and leggings

250311, 250398, 364552, 364490, H01J 3726, G01N 2322

Patent

active

046462538

ABSTRACT:
A method for high-precision imaging of electrical barrier layers (pn-junctions) in semiconductors by means of processing particle beam induced signals created during scanning with a corpuscular microscope, even when the electrical barrier layers are aligned perpendicularly or obliquely relative to a specimen surface. The path of the pn-junctions in cross-sections through semiconductor components may be identified with a high reliability such as within 0.1 .mu.m. Specific point (P(x,y), P(x+.DELTA.x, y+.DELTA.y), M(x,y), N(x,y), F(x,y)) is defined and particle beam induced signals generated along a scan line containing this specific point is compared with reference to particle beam induced signals generated along a further scanning line containing a point within a certain environment of the specific point first chosen with the comparison results being used to localize the electric barrier region profile.

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