Method for hydrogenating thin film transistor by using a spin-on

Fishing – trapping – and vermin destroying

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437 40, 437164, 437231, 437937, H01L 21225

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active

054016851

ABSTRACT:
A method for hydrogenating a thin film transistor, capable of making a sufficient amount of hydrogen penetrate a channel polysilicon of the thin film transistor, thereby reducing the amount of leakage current at a turn-off state of the thin film transistor while increasing the amount of drive current at a turn-on state of the thin film transistor so as to improve the characteristic of the thin film transistor. The method includes the steps of depositing an insulating film as a metal electrode protective film over a thin film transistor, which has been subjected to a patterning for forming metal electrodes, coating a silicon-on-glass film over the insulating film, and depositing another insulating film over the silicon-on-glass film so as to prevent hydrogen contained in the silicon-on-glass film from being externally leaked when the silicon-on-glass film is subsequently subjected to heat treatment.

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patent: 4996168 (1991-02-01), Ozaki et al.
patent: 5252515 (1993-10-01), Tsai et al.
patent: 5254497 (1993-10-01), Liu

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