Method for hydrogen treatment of field effect transistors for us

Details Method for hydrogen treatment of field effect transistors for us Method for hydrogen treatment of field effect transistors for us

1995-01-31

1997-01-21

Picardat, Kevin M.

Fishing, trapping, and vermin destroying

437 40, 437248, 148DIG162, H01L 2166

Patent

active

055959172

ABSTRACT:
A method for hydrogen treatment of FETs for use in hermetically sealed packages is disclosed. FETs such as GaInAs HEMTs are treated before hermetic packaging by heating them in a hydrogen atmosphere until their drain currents degrade, and then continuing to heat them until their drain currents are restored. The HEMTs' drain currents are monitored and the process is continued until the currents stabilize. Thereafter the devices' temperature is lowered to the desired operating temperature and their drain currents are measured. If the drain currents after treatment are close enough to the current levels before treatment, the devices are selected; otherwise they are rejected.

REFERENCES:
patent: 4354308 (1982-10-01), Shimada et al.
patent: 5322808 (1994-06-01), Brown et al.
patent: 5381103 (1995-01-01), Edmond et al.
patent: 5395785 (1995-03-01), Nguyen et al.

Affiliated with

Also associated with

Rating

Method for hydrogen treatment of field effect transistors for us does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for hydrogen treatment of field effect transistors for us, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for hydrogen treatment of field effect transistors for us will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2323644