Semiconductor device manufacturing: process – Including control responsive to sensed condition
Reexamination Certificate
2007-01-02
2007-01-02
Alanko, Anita (Department: 1765)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
C438S014000, C438S926000
Reexamination Certificate
active
10631582
ABSTRACT:
A method for homogenizing the thickness of a uniform layer deposited on a layer of a material etched according to functional patterns, consisting of filling the empty areas with dummy patterns; a function, providing the thickness variation of the uniform layer for a given distribution of the functional and dummy patterns, being known; the method comprising:determining a guard distance greater than the minimum possible distance between patterns;calculating the thickness variation which would be obtained if dummy patterns were placed inside of a region defined by the dimension of the empty area reduced by said guard distance; andif the calculated thickness variation is satisfactory, adopting the chosen dummy pattern distribution, otherwise iteratively repeating the process with a reduced guard distance.
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Yoo-Hyon Kim, et al., CHAMPS (CHemicAI-Mechanical Planarization Simulator), 2000 International Conference on Simulation Semiconductor Processes and Devices, Seattle, WA, (Cat No. 00TH8502), XP002240847, Sep. 6-8, 2000, pp. 123-126, Piscataway, NJ, USA, IEEE.
Alanko Anita
Lowrie Lando & Anastasi, LLP
Xyalis
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