Method for high frequency device operation with high temperature

Details Method for high frequency device operation with high temperature Method for high frequency device operation with high temperature

1996-06-25

1997-07-29

Mis, David

Oscillators

Solid state active element oscillator

Significant distributed parameter resonator

331108C, 257 76, H03B 912

Patent

active

056525516

ABSTRACT:
Micro-scale and nano-scale devices which achieve high frequency signals ug materials having increased electron saturation velocity. These devices have frequencies in the terahertz range with high temperature and radiation hard characteristics. The transit time device includes a substrate, a buffer layer and an epitaxial layer made of a material in the 43 m and 6 mm crystallographic point groups and associated alloys, and at least two contacts on the device. In operation, one contact is forward biased and the other is reversed biased. Applications for this devices include transit-time-based oscillators for use in military and civilian radar receivers, logic devices, burglar alarm and proximity alarm systems.

REFERENCES:
patent: 4352115 (1982-09-01), Moutou et al.
patent: 5479028 (1995-12-01), Tomioka et al.
patent: 5530267 (1996-06-01), Brandle, Jr. et al.

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