Method for heteroepitaxial growth of a two-dimensional material

Details Method for heteroepitaxial growth of a two-dimensional material Method for heteroepitaxial growth of a two-dimensional material

1989-07-25

1991-08-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

427 62, 437 84, 437105, 437108, 437126, 437939, 437946, 437976, H01L 2120, H01L 21203

Patent

active

050396269

ABSTRACT:
The disclosed method at first eliminates free bonds from a crystal surface of a three-dimensional substrate by terminating severed couplers or dangling bonds on the crystal surface by coupling such atoms to them which atoms are inseparable at temperatures for ensuring heteroepitaxial growth. The crystal surface has a 6-fold or 3-fold symmetry, such as (111) plane of a crystal of cubic symmetry or (0001) plane of a crystal of hexagonal symmetry. Then, a two-dimensional material, which is a layered material having bonds closed on a superthin two-dimensional layer, is formed by evaporation on the above dangling-bond-free crystal surface of the substrate so as to cause heteroepitaxial growth while orienting atoms of the two-dimensional material in direction of crystalline axis of the substrate by van der Vaars' force.

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Sysoev et al., ". . . Gallium Selenide Films, Grown By the Hot Wall Method on Silicon Substrates," Phys. Stat. Sol., (a) 94, 1986, pp. K129-32.

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