Method for heating semiconductor wafer by means of application o

Details Method for heating semiconductor wafer by means of application o Method for heating semiconductor wafer by means of application o

1982-11-30

1984-09-04

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576T, 29576B, 148175, 219 85BA, 219 85BM, 219354, 427 55, H01L 21265, H01L 2126

Patent

active

044695292

ABSTRACT:
When heating a semiconductor wafer by means of application of radiated light, subsidiary heating means which elongates along the circumference of the wafer is employed to additionally heat or to preheat the circumferential portion of the wafer so as to make the temperature of the wafer uniform at the entire surface thereof. Use of such subsidiary heating means is effective to prevent the occurrence of such a damage as slip line or the like in the wafer.

REFERENCES:
patent: 4081313 (1978-03-01), McNeilly et al.
patent: 4113547 (1978-09-01), Katz et al.
patent: 4331485 (1982-05-01), Gat
patent: 4350537 (1982-09-01), Young et al.
Lietoila et al., J. Appl. Phys. 53(2) [1982], p. 1169

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