Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1999-06-30
2000-11-07
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 1, 438795, C30B 1514
Patent
active
061430714
ABSTRACT:
There is disclosed a method for heat treatment of a silicon substrate produced by the CZ method by utilizing a rapid thermal annealer, wherein the heat treatment is performed under an atmosphere composed of 100% nitrogen, or 100% oxygen, or a mixed atmosphere of oxygen and nitrogen by heating the silicon substrate to a maximum holding temperature within a range of from 1125.degree. C. to the melting point of silicon, and holding the substrate at that maximum holding temperature for a holding time of 5 seconds or more, and then the substrate is rapidly cooled at a cooling rate of 8.degree. C./second or more from the maximum holding temperature. In the method, the amount of oxygen precipitation nuclei in the substrate can be controlled by changing the maximum holding temperature and the holding time. The present invention provide a method for heat treatment of a silicon substrate produced by the CZ method by utilizing an RTA apparatus, which can provide a silicon substrate having a desired oxygen precipitation characteristic without controlling oxygen concentration in the silicon substrate, and an epitaxial wafer utilizing a substrate heat-treated by the method.
REFERENCES:
patent: 4943558 (1990-07-01), Soltis et al.
patent: 5279973 (1994-01-01), Suizu
Aihara Ken
Takeno Hiroshi
Garrett Felisa
Shin-Etsu Handotai & Co., Ltd.
LandOfFree
Method for heat treatment of silicon substrate, substrate treate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for heat treatment of silicon substrate, substrate treate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for heat treatment of silicon substrate, substrate treate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1636749