Method for heat treating semiconductor material using high inten

Details Method for heat treating semiconductor material using high inten Method for heat treating semiconductor material using high inten

1980-03-03

1982-05-25

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 357 91, 427 531, 427 55, H01L 2126, H01L 21265

Patent

active

043314856

ABSTRACT:
Apparatus for annealing semiconductor wafers includes a support for receiving the wafers and resistive heaters for heating the wafers by thermal conduction through the support or by convection. A high intensity arc lamp scans the heated wafers thereby raising the temperature sufficiently for heat treating. The process is simple, rapid, efficient, and does not create damaging thermal stresses in the wafers. The high temperature and short time treatment enables material properties unobtainable with conventional thermal processes.

REFERENCES:
patent: 4115163 (1978-09-01), Gorina
patent: 4151008 (1979-04-01), Kirkpatrick
patent: 4169740 (1979-10-01), Kalbitzer et al.
Cohen et al., Appl. Phys. Letts., 33 (Oct. 1978), 751.
Celler et al., J. Appl. Phys., 50 (1979), 7264.
Bomke et al., Appl. Phys. Letts., 33 (1978), 955.
E G & G Data Sheet, F1008 C-4, DC Krypton Arc Discharge Tube.
Van Gutfeld, IBM Tech. Discl. Bulletin, 19 (1977), 3955.
Gat et al., Appl. Phys. Letts. 33 (1978), 389.

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