Method for heat treating a semiconductor substrate to reduce def

Details Method for heat treating a semiconductor substrate to reduce def Method for heat treating a semiconductor substrate to reduce def

1993-07-15

1996-03-26

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437939, H01L 21324, H01L 21477

Patent

active

055020100

ABSTRACT:
A method of processing a semiconductor substrate includes the step of subjecting a semiconductor substrate to a heat treatment under a gaseous atmosphere. The method comprises the step of subjecting a semiconductor substrate to a high temperature heat treatment at temperatures not lower than 1100.degree. C. under a non-oxidizing atmosphere, wherein heat treatments before the high temperature heat treatment applied to the semiconductor substrate are applied under heat treating temperatures and heat treating time which fall within a region defined by a line connecting four points of (900.degree. C., 4 minutes), (800.degree. C., 40 minutes), (700.degree. C., 11 hours) and (600.degree. C., 320 hours) in a graph, in which the heat treating temperature is plotted on the abscissa and the heat treating time is plotted on the ordinate of the graph.

REFERENCES:
patent: 3925107 (1975-12-01), Goula et al.
patent: 3997368 (1976-12-01), Petroff et al.
patent: 4116719 (1978-09-01), Shimizu et al.
patent: 4220483 (1980-09-01), Cacgarra
patent: 4314595 (1982-02-01), Yamamoto et al.
patent: 4376657 (1983-03-01), Nagasawa et al.
patent: 4505759 (1985-03-01), O'Mara
patent: 4547256 (1985-10-01), Gurtler et al.
patent: 4548654 (1985-10-01), Tobin
patent: 4597804 (1986-07-01), Imaoka
patent: 4622082 (1986-11-01), Dyson et al.
patent: 4626450 (1986-12-01), Tani et al.
patent: 4637123 (1987-01-01), Cazcarra et al.
patent: 4666532 (1987-05-01), Korb et al.
patent: 4681983 (1987-07-01), Markvart et al.
patent: 4713354 (1987-12-01), Egawa et al.
patent: 5009926 (1991-04-01), Fukada
patent: 5094963 (1992-03-01), Hiraguchi et al.
patent: 5096839 (1992-03-01), Amai et al.
patent: 5286658 (1994-02-01), Shirakawa et al.
patent: 5327007 (1994-07-01), Imura et al.
patent: 5385115 (1995-01-01), Tomioka et al.
patent: 5403406 (1995-04-01), Falster et al.
patent: 5445975 (1995-08-01), Gardner et al.
Appl. Phys. Lett., vol. 46, No. 5, pp. 516-518, Mar. 1, 1985, Kenji Nishi, et al., "Fast Shrinkage of Oxidation-Induced Stacking Faults in Silicon at the Initial Stage of Annealing in Nitrogen".

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