Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Forming a single-crystal region by liquefying a region of a...
Patent
1995-01-12
1996-08-27
Garrett, Felisa C.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Forming a single-crystal region by liquefying a region of a...
117 40, 117925, C30B 1904
Patent
active
055497489
ABSTRACT:
A method of preparing single crystals. The method of preparation involves preparing precursor materials of a particular composition, heating the precursor material to achieve a peritectic mixture of peritectic liquid and crystals, cooling the peritectic mixture to quench directly the mixture on a porous, wettable inert substrate to wick off the peritectic liquid, leaving single crystals on the porous substrate. Alternatively, the peritectic mixture can be cooled to a solid mass and reheated on a porous, inert substrate to melt the matrix of peritectic fluid while leaving the crystals unmelted, allowing the wicking away of the peritectic liquid.
REFERENCES:
patent: 5116808 (1992-05-01), Belouet
patent: 5231076 (1993-07-01), Jeong et al.
patent: 5306697 (1994-04-01), Salama et al.
Sengupta Suvankar
Shi Donglu
Todt Volker R.
Garrett Felisa C.
University of Chicago
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