Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2007-04-17
2007-04-17
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S459000, C438S464000, C438S456000, C438S977000
Reexamination Certificate
active
10509007
ABSTRACT:
This invention relates to a method for making a thin layer starting from a wafer comprising a front face with a given relief, and a back face, comprising steps consisting of:a) obtaining a support handle with a face acting as a bonding face;b) preparing the front face of the wafer, this preparation including incomplete planarisation of the front face of the wafer, to obtain a bonding energy E0between a first value corresponding to the minimum bonding energy compatible with the later thinning step, and a second value corresponding to the maximum bonding energy compatible with the subsequent desolidarisation operation, the bonding energy E0being such that E0=α.E, where E is the bonding energy that would be obtained if the front face of the wafer was completely planarised, α is the ratio between the incompletely planarised area of the front face of the wafer and the area of the front face of the wafer if it were completely planarised;c) solidarising the front face of the wafer on the bonding face of the support handle, by direct bonding;d) thinning the wafer starting from its back face until the thin layer is obtained;e) transferring the thin layer onto a usage support, involving separation from the support handle.
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Aspar Bernard
Clerc Jean-Frederic
Zussy Marc
Commisariat l'Energie Atomique
Thelen Reid Brown Raysman & Steiner LLP
Wilczewski M.
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