Method for halide VPE of III-V compound semiconductors

Details Method for halide VPE of III-V compound semiconductors Method for halide VPE of III-V compound semiconductors

1988-08-30

1989-02-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG57, 148DIG65, 156613, 156614, 118715, 118729, 437 85, 437126, 437132, 437133, 437939, 437946, H01L 21205, H01L 21223

Patent

active

048085510

ABSTRACT:
In an epitaxial growth method of this invention, a first gas consisting of a hydrogen diluted gas containing a Group V element is continuously flowed on a monocrystalline substrate that is placed in a reaction chamber, the monocrystalline substrate is arranged in a gas mixing region where the first gas and a second gas containing a halogenide of a Group III element are mixed adjacent to the monocrystalline substrate, and a Group III-V compound semiconductor is grown on the monocrystalline substrate.

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Akiyama et al., "Growth of GaAS on Si by MOCVD," J. Crystal Growth, vol. 68, No. 1, 1984, pp. 21-26.

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