Method for growth of silicon carbide single crystal, silicon...

Details Method for growth of silicon carbide single crystal, silicon... Method for growth of silicon carbide single crystal, silicon...

2004-06-15

2008-11-25

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S084000, C117S090000

Reexamination Certificate

active

07455730

ABSTRACT:
A method for producing a single crystal includes supplying a vapor gas from silicon carbide as a raw material to a seed crystal formed of a silicon carbide single crystal to grow the seed crystal. The seed crystal is disposed in a part of crystal growth, with a crystal face of the seed crystal inclined relative to a (0001) plane or (000-1) plane, thereby making crystal growth.

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