Method for growth of II-VI compound semiconductors

Details Method for growth of II-VI compound semiconductors Method for growth of II-VI compound semiconductors

1995-05-31

1997-04-01

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117956, C30B 1514

Patent

active

056161786

ABSTRACT:
A method for growth of II-VI compound semiconductors grows a p-type II-VI compound semiconductor such as a p-type ZnSe by vapor deposition such as metallorganic chemical vapor deposition and molecular beam epitaxy using gaseous materials. The method uses as a p-type dopant an organic compound including at least one nitrogen atom and at least two groups of atoms each having a molecular weight larger than 12 and both combined with the nitrogen atom. One of such organic compounds is di-isopropylamine.

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patent: 5423284 (1995-06-01), Nishimura et al.
patent: 5456207 (1995-10-01), Gedridge, Jr. et al.
A. Toda et al., "Blue-green ZnCdSe light-emitting diodes grown by MOCVD," Electronics Letters, 2nd Feb. 1995, vol. 31, No. 3, pp. 235-237.
W.S. Rees et al., "Synthesis, characterization and evaluation of zinc-amides as a potential dopant sources for ZnSe OMVPE" Chamical Perspectives of Microelectronic Materials III Symposium, Mater. Res. Soc., pp. 63-67, 1993.

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