Method for growth of crystal

Details Method for growth of crystal Method for growth of crystal

1992-11-19

1994-11-15

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117106, 117 90, 117 7, 117913, C30B 2502

Patent

active

053637992

ABSTRACT:
A method for growth of a crystal wherein a monocrystalline seed is arranged on a substrate and a monocrystal is permitted to grow with the seed as the originating point, comprises the step of:

REFERENCES:
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 3620833 (1971-11-01), Gleim et al.
patent: 3634143 (1972-01-01), Brennan
patent: 3655439 (1972-04-01), Seiter
patent: 4147584 (1979-04-01), Garrison et al.
patent: 4361600 (1982-11-01), Brown
patent: 4448632 (1984-05-01), Akasaka
Brice, "Crystal Growth Processes", John Wiley and Sons, Blackie and Sons, Bishopbriggs, Glasgow 1986 p. 249.
Smith et al, "Graphoepitaxy and Zone Melting Recrystallization of Patterned Films", Journal of Crystal Growth, vol. 63, 1983, pp. 535-537.

Affiliated with

Also associated with

Rating

Method for growth of crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for growth of crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for growth of crystal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1090416