Method for growth of a nitrogen-doped gallium phosphide epitaxia

Details Method for growth of a nitrogen-doped gallium phosphide epitaxia Method for growth of a nitrogen-doped gallium phosphide epitaxia

1996-03-22

1999-11-16

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

117 56, 117 57, 117953, C30B 1910

Patent

active

059850230

ABSTRACT:
While a nitrogen-doped gallium phosphide epitaxial layer in an epitaxial wafer as a material of light-emitting diodes is desired to have a high concentration of nitrogen in order to enhance the efficiency of light emission, the present invention provides a reliable and efficient means to accomplish a high nitrogen concentration by the increase of the concentration of ammonia as a nitrogen source in the doping atmosphere to the contrary to the general understanding that increase of the ammonia concentration to exceed a limit rather has an effect of decreasing the concentration of nitrogen doped in the epitaxial layer. The inventive method is based on the discovery that an exponential relationship is held between the growth rate of the epitaxial layer and the concentration of nitrogen in the thus grown epitaxial layer.

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