Method for growing transparent conductive GaInO.sub.3 films by p

Details Method for growing transparent conductive GaInO.sub.3 films by p Method for growing transparent conductive GaInO.sub.3 films by p

1995-01-24

1996-07-23

Niebling, John

Coating processes

Direct application of electrical, magnetic, wave, or...

Electromagnetic or particulate radiation utilized

427586, C23C 1428

Patent

active

055387675

ABSTRACT:
Applicants have discovered that films of conductively doped GaInO.sub.3 grown on substrates by pulsed laser deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from room temperature to 350.degree. C. in an ambient containing oxygen at partial pressure in the range 0.1 mTorr to 100 mTorr. The preferred laser source was an excimer laser operating in the deep ultraviolet.

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J. P. Zheng et al. "Low Resistivity Indium Tin Oxide by Pulsed Laser Deposition", Appl. Phys. Lett., vol. 63 p. 1, (1993).

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