Method for growing thin semiconducting epitaxial layers

Details Method for growing thin semiconducting epitaxial layers Method for growing thin semiconducting epitaxial layers

1976-08-26

1977-05-31

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148172, 156624, 252 623GA, H01L 21208

Patent

active

040267350

ABSTRACT:
The specification describes a liquid phase epitaxial (LPE) crystal growth process wherein semi-insulating epitaxial layers of gallium arsenide (GaAs) are formed on selected substrates by dipping the substrates into a saturated solution of GaAs in gallium. Prior to exposing the substrates to the above solution, the substrates are shielded by a nonreactive container of a material possessing a high thermal conductivity which, when immersed in the solution, serves to establish a thermal equilibrium between the substrate and the solution. This insures good nucleation in and crystal growth of the high quality semiconductor layers grown, and these layers may be grown to minimum thicknesses on the order of 0.2 micrometers or less with excellent control.

REFERENCES:
patent: 3556732 (1971-01-01), Chang et al.
patent: 3663722 (1972-05-01), Kamath
patent: 3785885 (1974-01-01), Stone
patent: 3933539 (1976-01-01), Gartman

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