Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-08-23
2005-08-23
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S104000, C117S106000, C117S107000, C117S948000
Reexamination Certificate
active
06932867
ABSTRACT:
A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material. The oxygen source material is preferably a metal alkoxide. The metal source material may be a metal halide, hydride, alkoxide, alkyl, a cyclopentadienyl compound, or a diketonate.
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Kukli Kaupo
Leskela Markku
Rahtu Antti
Ritala Mikko
ASM International N.V.
Knobbe Martens Olson & Bear LLP
Kunemund Robert
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