Method for growing thin nitride film onto substrate and thin...

Details Method for growing thin nitride film onto substrate and thin... Method for growing thin nitride film onto substrate and thin...

2004-06-15

2010-10-26

Meeks, Timothy H (Department: 1715)

Coating processes

With pretreatment of the base

C117S030000, C117S054000, C117S079000, C117S085000, C117S103000

Reexamination Certificate

active

07820246

ABSTRACT:
The present invention provides a method for growing a thin nitride film over a substrate and a thin nitride film device, in which the polarity of the thin nitride film can be controlled by a low temperature process. In the method for growing the thin nitride film over a substrate, a Ga face (2) and a N face (3) are formed over a c face sapphire (Al2O3) substrate (1), the Ga face (2) growing in +c face, and the N face (3) growing in −c face.

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