Method for growing single crystals from polycrystalline precurso

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat

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117 2, 117 3, 117 7, C30B 2504

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active

060483946

ABSTRACT:
A method is disclosed for forming a single crystal relaxor based material, including the following steps: providing a seed single crystal plate, providing a first and second polycrystalline structure, bonding the top surface of the seed crystal plate to the outer surface of the first polycrystalline structure, bonding the bottom surface of the seed crystal plate to the outer surface of the second polycrystalline structure, and annealing the bonded structure.

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patent: 5281283 (1994-01-01), Tokunaga et al.
patent: 5304226 (1994-04-01), Hasegawa et al.
N. Yamamoto and S. Matsuzawa, "The Solid-Phase Epitaxial Growth Method," Fine Ceramics, ed., S. Saito, Ohmsha, Ltd., 1985, pp. 39-44.
T. Yamamoto and T. Sakuma, "Preparation of BaTiO.sub.3 Single Crystals by Sintering," pp. 209-215, Proceedings of the 2.sup.nd Japanese International SAMPE, Dec. 11-14, 1991.
T. Yamamoto and T. Sakuma, "Fabrication of Barium Titanate Single Crystals by Solid-State Grain Growth," Journal of the American Ceramic Society, 77`1`, pp. 1107-1109, 1994.

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