Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
Patent
1998-08-14
2000-04-11
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
Using heat
117 2, 117 3, 117 7, C30B 2504
Patent
active
060483946
ABSTRACT:
A method is disclosed for forming a single crystal relaxor based material, including the following steps: providing a seed single crystal plate, providing a first and second polycrystalline structure, bonding the top surface of the seed crystal plate to the outer surface of the first polycrystalline structure, bonding the bottom surface of the seed crystal plate to the outer surface of the second polycrystalline structure, and annealing the bonded structure.
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T. Yamamoto and T. Sakuma, "Preparation of BaTiO.sub.3 Single Crystals by Sintering," pp. 209-215, Proceedings of the 2.sup.nd Japanese International SAMPE, Dec. 11-14, 1991.
T. Yamamoto and T. Sakuma, "Fabrication of Barium Titanate Single Crystals by Solid-State Grain Growth," Journal of the American Ceramic Society, 77`1`, pp. 1107-1109, 1994.
Chan Helen M.
Harmer Martin P.
Khan Ajmal
Lee Ho-Yong
Li Tao
Competitive Technologies of PA, Inc.
Garrett Felisa
Novack Michael R.
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