Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1992-09-21
1994-05-17
Straub, Gary P.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
117900, 117954, 117956, 117958, 117955, 117223, C30B 700, C30B 1100, C30B 3500
Patent
active
053125061
ABSTRACT:
There is here provided a method for growing single crystals from a melt which comprises the steps of preparing a double structure crucible constituted of an inner tube and an outer tube; placing a raw material in the inner tube; hermetically sealing the outer tube; and heating/melting the raw material to perform crystal growth.
According to the present invention, it is possible to hermetically confine and to crystallize the raw material even at a high temperature.
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Mitsui Mining Company Limited
Straub Gary P.
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