Method for growing single crystal III-V compound semiconductor l

Details Method for growing single crystal III-V compound semiconductor l Method for growing single crystal III-V compound semiconductor l

1996-06-26

1999-01-26

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438479, 438483, 438503, 148DIG25, 148DIG113, H01L 2120

Patent

active

058638113

ABSTRACT:
A method for growing a single crystal III-V compound semiconductor layer, in which grown by vapor deposition on a first single crystal III-V compound semiconductor layer including at least Ga and N is a second single crystal III-V compound semiconductor layer different from the first layer and including at least Ga and N, comprises the steps of: growing a buffer layer other than single crystal and having substantially the same composition as that of the second layer by vapor deposition on the first layer; and growing the second layer on the buffer layer. A method for growing a single crystal AlGaN layer on a single crystal GaN layer by vapor deposition, comprises the steps of: growing a buffer layer of a III-V compound semiconductor including at least Ga and N on the single crystal GaN layer by vapor deposition; and growing the single crystal AlGaN layer on the buffer layer by vapor deposition. A method for growing single crystal III-V compound semiconductor layers, in which a first single crystal III-V compound semiconductor layer including at least Ga and N and a second single crystal III-V compound semiconductor layer different from the first layer and including at least Ga and N are grown on a substrate by vapor deposition, comprises the step of: growing a buffer layer of a III-V compound semiconductor including at least Ga and N between the first layer and the second layer.

REFERENCES:
patent: 4855249 (1989-08-01), Akasaki et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5306662 (1994-04-01), Nakamura et al.
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5602418 (1997-02-01), Imai et al.
patent: 5656832 (1997-08-01), Ohba et al.
patent: 5665986 (1997-09-01), Miura et al.

Affiliated with

Also associated with

Rating

Method for growing single crystal III-V compound semiconductor l does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for growing single crystal III-V compound semiconductor l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for growing single crystal III-V compound semiconductor l will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1449989