Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1996-02-21
1997-10-21
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
117 81, 117204, 117206, C30B 1112
Patent
active
056791518
ABSTRACT:
Method of forming a single crystal of ZnSe. A charge of material is loaded in a container. The charge of material is melted to create a melt of material. A single crystal is grown from the melt of material. Then, the grown crystal is brought out of contact with the wall surface of the container. The temperature of the crystal is varied across its phase transition temperature range while establishing a temperature gradient from one end of the grown crystal to the other end. This method is carried out, using a crystal grower comprising the container and an elevation member. The container is disposed inside a high-pressure vessel. The container tapers off downward and is provided with a hole extending from its lower end. The elevation member is inserted into the hole from below to push the grown crystal in a crucible upward. The container is composed of plural separable parts. After the growth of the crystal, the assembled parts are moved substantially horizontally outwardly so that the parts are separated from each other.
REFERENCES:
patent: 2402582 (1946-06-01), Scaff
patent: 5037621 (1991-08-01), Kennedy et al.
patent: 5499600 (1996-03-01), Okuno et al.
Akira Omino, et al., "Bridgman Growth of ZnSe Crystals with a PBN Crucible Sealed in a Molybdenum Capsule", Journal of Crystal Growth, vol. 117, (pp. 80-84), 1992.
Michael Shone, et al., "Vertical Zone Growth and Characterization of Undoped and Na, P and Mn Doped ZnSe", Journal of Crystal Growth, vol. 86, (pp. 132-137), 1988.
Kawanaka Takao
Ohmoto Seiichiro
Okada Hiroshi
Sakashita Yoshihiko
Uehara Katsuhiro
Garrett Felisa
Kabushiki Kaisha Kobe Seiko Sho
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