Method for growing single crystal

Details Method for growing single crystal Method for growing single crystal

1999-03-05

2000-12-26

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having moving solid-liquid-solid region

117 37, 117 40, 117 41, 117 44, 117 51, C30B 1522

Patent

active

061652636

ABSTRACT:
A method for growing a single crystal by allowing a seed crystal to contact a molten zone formed by melting a polycrystalline material, followed by moving the molten zone away from the seed, wherein the oxygen concentration in the atmosphere during growth of the single crystal is lower than about 10% by volume.

REFERENCES:
patent: 4218282 (1980-08-01), Kochi
patent: 4444728 (1984-04-01), Lanam et al.
patent: 5444040 (1995-08-01), Kojima et al.
M. Gomi, et al., "Films Prepared By Sputtering," J. Appl. Phys., 70(11), pp. 7065-7067 (Dec. 1991).
H.J. Van Hook, et al., "Phase Relations in the Ternary System Fe.sub.2 O.sub.3 -FeO-YFeO.sub.3," J. Am. Ceramic Soc., 45, pp. 162-165 (Apr. 1962).
Patent Abstracts of Japan; vol. 1995, No. 07; Aug. 21, 1995 & JP 07 089797 A (Mitsubishi Heavy Ind. Ltd.) Apr. 4, 1995; Abstract.

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