Method for growing silicon single crystal and method for...

Details Method for growing silicon single crystal and method for... Method for growing silicon single crystal and method for...

2006-02-17

2010-10-26

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S014000, C117S015000, C117S932000

Reexamination Certificate

active

07819972

ABSTRACT:
In a method for growing a silicon single crystal, a silicon single crystal is grown by the Czochralski method to have an oxygen concentration of 12×1017to 18×1017atoms/cm3on ASTM-F121 1979. A mixed gas of an inert gas and a gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the single crystal. A temperature of the silicon single crystal is controlled during the growth of the crystal such that the ratio Gc/Ge of an axial thermal gradient Gc at the central portion of the crystal between its melting point and its temperature of 1350° C. to an axial thermal gradient Ge at the periphery of the crystal between its melting point and its temperature of 1350° C. is 1.1 to 1.4. The axial thermal gradient Gc at the central portion of the crystal is 3.0 to 3.5° C./mm.

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European Search Report dated May 26, 2009 for 05806144.1-1215.

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