Method for growing silicon single crystal

Details Method for growing silicon single crystal Method for growing silicon single crystal

1992-09-30

1996-05-21

Straub, Gary P.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 33, 117932, 423348, 423349, 423350, C30B 2906, C30B 1520, C01B 3302

Patent

active

RE0352420

ABSTRACT:
A method for growing silicon single crystal uses as materials, silicon granules prepared by the silane process and having a residual hydrogen concentration of 7.5 wtppm or less, silicon granules prepared by the trichlorosilane process and having a residual chlorine concentration of 15 wtppm or less. In the case where such silicon granules are used, a bursting phenomenon does not occur when the silicon granules are melted. As a result, there is no scattered matter due to the bursting phenomenon, whereby the growth condition of the single crystal is not disturbed.

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