Method for growing silicon crystal

Details Method for growing silicon crystal Method for growing silicon crystal

1993-07-21

1995-04-25

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 13, 117 19, 117 20, C30B 1504

Patent

active

054089514

ABSTRACT:
In an improved Czochralski process for growing silicon crystals, wherein a single-crystal silicon seed is pulled from a molten silicon source to grow the crystal therefrom, a pre-oxidized arsenic dopant is added to the molten silicon source to alter an electrical property of the grown crystal. The pre-oxidized arsenic dopant includes granular particles of metallic arsenic having a surface film of arsenic oxide, the surface film having a thickness of ten microns to one millimeter. After doping, the molten silicon source is moved from the grown crystal, and an applied temperature is increased to burn excess pre-oxidized dopant.

REFERENCES:
patent: 4097329 (1978-06-01), Stock et al.
patent: 4134785 (1979-01-01), Lavigna et al.
6-3 Methods of Doping; Silicon Semiconductor Technology (Texas Instruments Electronics Series); Runyan; pp. 114-116.

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