Method for growing silicon carbide whiskers

Details Method for growing silicon carbide whiskers Method for growing silicon carbide whiskers

1990-04-12

1991-08-13

Chaudhuri, Olik

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

501 88, C01B 3136

Patent

active

050395017

ABSTRACT:
Method for rapidly growing silicon carbide whiskers having high aspect ratios comprising heating a carbon substrate to between about 1600.degree. C. and 1800.degree. C. and thereat contacting the substrate with a reactive atmosphere consisting essentially of gaseous species of silicon, carbon, nitrogen, sulfur and a group II metal selected from the group consisting of calcium, magnesium and barium.

REFERENCES:
patent: 4536379 (1985-08-01), Carlson et al.
patent: 4605542 (1986-08-01), Harada
patent: 4855119 (1989-08-01), Minamikata et al.
Egashira et al., Growth of beta-silicon carbide whiskers from vapor phase via silicon sulfide intermediate, Yogyo Kyokaishi, 93(9), 535-40.

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