Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1987-11-23
1989-06-27
Morgenstern, Norman
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
427 62, 427 63, 427 531, 427226, 427314, B05D 512
Patent
active
048430609
ABSTRACT:
A method for growing a patterned superconductive oxide film of the general formula XZ.sub.2 Cu.sub.3 O.sub.6+x is disclosed, wherein X is yttrium, a lanthanide or a mixture thereof, Z is one or more alkaline earth elements and x is a number between 0 and 1. This patterned superconductive oxide film of XZ.sub.2 Cu.sub.3 O.sub.6+x is formed by preparing an aqueous solutuion of the nitrates of X, Z and Cu in the X:Z:Cu stoichiometric ratio of 1:2:3; spraying the aqueous nitrate solution onto a heated substrate to form on the substrate a thin film of XZ.sub.2 Cu.sub.3 O.sub.y material, wherein y is an undefined number; spot-heating preselected portions of the thin film in an oxygen-rich atmosphere to convert the preselected portions into the patterned superconductive oxide film of XZ.sub.2 Cu.sub.3 O.sub.6+x ; and removing the unheated thin film of XZ.sub.2 Cu.sub.3 O.sub.y material with a solvent.
REFERENCES:
patent: 3801366 (1974-04-01), Lemelson
patent: 4316785 (1982-02-01), Suzuki et al.
patent: 4395436 (1983-07-01), Bianchi et al.
Kawai et al., Jap. J. of Appl. Phys. Letters vol. 26, No. 10, Oct. 1981, L1740-1742.
Greene Richard F.
Lessoff Howard
Bueker Margaret
Jameson George
McDonnell Thomas E.
Morgenstern Norman
The United States of America as represented by the Secretary of
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