Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-09-19
2006-09-19
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S089000, C117S104000
Reexamination Certificate
active
07108747
ABSTRACT:
The present invention relates to a method for growing oxide thin films which contain barium and/or strontium. According to the method, such thin films are made by the ALE technique by using as precursors for barium and strontium their cyclopentadienyl compounds. A thin film made by means of the invention has a high permittivity and excellent conformality.
REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4927670 (1990-05-01), Erbil
patent: 5225561 (1993-07-01), Kirlin et al.
patent: 5439876 (1995-08-01), Graf et al.
patent: 5453494 (1995-09-01), Kirlin et al.
patent: 5472927 (1995-12-01), Mulder et al.
patent: 5496582 (1996-03-01), Mizutani et al.
patent: 5617290 (1997-04-01), Kulwicki et al.
patent: 5972430 (1999-10-01), DiMeo, Jr. et al.
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6087257 (2000-07-01), Park et al.
patent: 6099904 (2000-08-01), Mak et al.
patent: 6144060 (2000-11-01), Park et al.
patent: 6380579 (2002-04-01), Nam et al.
patent: 6420230 (2002-07-01), Derderian et al.
patent: 6444592 (2002-09-01), Ballantine et al.
patent: 6583057 (2003-06-01), Alluri et al.
patent: 6800567 (2004-10-01), Cho
patent: A1 0 344 352 (1989-12-01), None
patent: A1 2 626 110 (1989-07-01), None
patent: PCT/FI 99/00741 (1999-12-01), None
Materials Science and Engineering, vol. B41, 1996, Lauri Niinisto et al, “Synthesis of oxide thin films and overlayers by atomica layer epitaxy for advanced applications” p. 23-29.
Bilodeau et al., “MOCVD BaSrTiO3for ≧1-Gbit DRAMs,”Solid State Technology, pp. 235-242 (Jul. 1997).
Kang et al., “Deposition Characteristics of (Ba, Sr) TiO3Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures,”Jpn. J. Appl. Phys., vol. 36, pp. 6946-6952 (1997).
Kiyotoshi et al., “Chemical Vapor Deposition of High Quality (Ba, Sr)TiO3Thin Films Using Individual Vaporizing Liquid Source Supply System,”Electrochemical Society Proceedings, vol. 97-25, pp. 1063-1070 (1997).
Martenson et al., “Halide chemical vapour deposition of Bi2Sr2CaCu2O8+x: aspects of epitaxy,”Journal of Crystal Growth, vol. 156, pp. 67-73 (1995).
Niinistö et al., “Synthesis of oxide thin films and overlayers by atomic layer epitaxy for advanced applications,”Materials Science&Engineering, vol. B41, pp. 23-29, (1996).
Ritala et al., “Growth of titanium dioxide thin films by atomic layer epitaxy,”Thin Solid Films, vol. 225, pp. 288-295 (1993).
Ritala et al., “Titanium Isopropoxide as a Precursor in Atomic Layer Epitaxy of Titanium Dioxide Thin Films,”Chem. Mater.,vol. 5, pp. 1174-1181 (1993).
Ritala et al., “Atomic Epitaxy Growth of Titanium Dioxide Thin films from Titanium Ethoxide,”Chem. Mater.,vol. 6, pp. 556-561 (1994).
Schulz et al., “MOCVD Routes to Thin Metal Oxide Films for Superconducting Electronics,”Adv. Mater.,vol. 6, No. 10, pp. 719-730 (1994).
Sheppard, “Advances in Processing of Ferroelectric Thin Films,”Ceramic Bulletin, vol. 71, No. 1, (1992).
Advances in Organometallic Chemistry, Ed. Stone and West, vol. 40, Academic Press (1996).
Suntola, “Atomic layer epitaxy,”Thin Solid Films, vol. 216, pp. 84-89 (1992).
Wojtczak et al., “A Review of Group 2 (Ca, Sr, Ba) Metal-Organic Compounds as Precursors for Chemical Vapor Deposition,”Advances in Organometallic Chemistry, vol. 40, pp. 215-340 Academic Press (1996).
Vehkamäki et al.,Growth of SrTiO3and BaTiO3Thin Films by Atomic Layer Deposition, Electrochemical and Solid-State Letters, 2 (10) pp. 504-506 (1999).
Nakano et al.,Digital chemical vapor deposition of SiO2, Appl. Phys. Lett 57 (11), Sep. 10, 1990, pp. 1096-1098.
S.M. Bedair,Atomic layer epitaxy deposition processes, J. Vac. Sci Technol. B 12(1), Jan./Feb. 1994, pp. 179-185.
Hänninen Timo
Hatanpää Timo
Leskelä Markku
Ritala Mikko
Vehkamäki Marko
ASM International N.V.
Knobbe Martens Olson & Bear LLP
Kunemund Robert
LandOfFree
Method for growing oxide thin films containing barium and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for growing oxide thin films containing barium and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for growing oxide thin films containing barium and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3599067