Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2011-04-26
2011-04-26
Dickey, Thomas L (Department: 2893)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C117S084000, C257SE21240, C257SE21148
Reexamination Certificate
active
07932107
ABSTRACT:
A method for growing a nitride semiconductor has a first step for forming a surface reformation layer on a sapphire substrate, a second step for raising a temperature of the sapphire substrate with the surface reformation layer formed thereon up to a growth temperature of the nitride semiconductor in an atmosphere including ammonia, and a third step for growing a nitride semiconductor layer on a surface of the surface reformation layer. Alternatively, the second step is conducted in an atmosphere including an inert gas, or an atmosphere including the inert gas and hydrogen at a concentration of 10% or less relative to the inert gas.
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Dickey Thomas L
Hitachi Cable Ltd.
McGinn IP Law Group PLLC
Yushin Nikolay
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