Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1997-12-04
1999-11-30
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
117104, 117105, 117108, 117952, 438 46, C30B 2300
Patent
active
059935421
ABSTRACT:
A method for fabricating nitride III-V compound semiconductor layers of substrate, of GaN for example, comprises the steps of: growing a first B.sub.w Al.sub.x Ga.sub.y In.sub.z N layer 2 (where 0.ltoreq.w.ltoreq.1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.y.ltoreq.1 and w+x+y+z=1) on a sacrificial sapphire substrate 1 by MOCVD at a growth rate not higher than 4 .mu.m/h; growing a second B.sub.w Al.sub.x Ga.sub.y In.sub.z N layer 3 (where 0.ltoreq.w.ltoreq.1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.y.ltoreq.1 and w+x+y+z=1) on the first B.sub.w Al.sub.x Ga.sub.y In.sub.z N layer by hydride VPE at a growth rate higher than 4 .mu.m/h and not higher than 200 .mu.m/h; and removing the sacrificial substrate 1.
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Ikeda Masao
Tomioka Satoshi
Yanashima Katsunori
Champagne Donald L.
Hiteshew Felisa
Sony Corporation
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