Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1985-02-28
1986-09-16
Saba, William G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 29576J, 29576W, 29575, 29578, 148174, 148DIG26, 148DIG85, 148DIG150, 156612, 156DIG65, 156DIG88, 357 4, 357 50, H01L 2120, H01L 2176
Patent
active
046120726
ABSTRACT:
The purity and perfection of a semiconductor is improved by depositing a patterned mask (12) of a material impervious to impurities of the semiconductor on a surface (14) of a blank (10). When a layer (40) of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings (16) in the mask (12) and will bridge the connecting portions of the mask to form a continuous layer (40) having improved purity, since only the portions (42) overlying the openings (16) are exposed to defects and impurities. The process can be reiterated and the mask translated to further improve the quality of grown layers.
REFERENCES:
patent: 3564358 (1971-02-01), Hahnlein
patent: 3634150 (1972-01-01), Horn
patent: 4378629 (1983-04-01), Bozler et al.
patent: 4482422 (1984-11-01), McGinn
Tausch et al., "Novel Crystal Growth . . . Overgrowth Onto Silicon Dioxide", J. Electrochem. Soc., vol. 112, No. 7, Jul. 1965, pp. 706-709.
Daud Taher
Morrison Andrew D.
Jones Thomas H.
Manning John R.
McCaul Paul F.
Saba William G.
The United States of America as represented by the Administrator
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