Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1996-10-09
1998-05-19
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438684, H01L 2170
Patent
active
057535590
ABSTRACT:
Hemispherical-grained silicon (HSG-Si) is grown on polysilicon by plasma deposition. A wider range of substrate deposition temperatures can be used in the plasma deposition of HSG-Si than can be maintained in the low pressure chemical vapor deposition (LPCVD) of HSG-Si. The plasma deposition of HSG-Si can be performed in an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system at input power levels ranging from 100-1500 W, at total pressures between 5-60 mTorr, and at substrate temperatures ranging from 200.degree.-500.degree. C. A mixture of silane and hydrogen gases at a dilution ratio of silane within the silane and hydrogen gas mixture H.sub.2 /(SiH.sub.4 +H.sub.2) between about 70-99% may be used in the ECR-CVD system. The polysilicon surface is cleaned of native oxides prior to plasma deposition of HSG-Si.
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Lur Water
Sun Shih-Wei
Yew Tri-Rung
Bowers Jr. Charles L.
Raynes Alan S.
United Microelectronics Corporation
Wright William H.
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