Method for growing Group III atomic layer

Details Method for growing Group III atomic layer Method for growing Group III atomic layer

1997-03-27

2000-03-14

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117101, 117106, 117913, 117923, 117953, C30B 2304

Patent

active

060367733

ABSTRACT:
A Group III atomic layer required for fabrication of a semiconductor quantum nanostructure is grown to be properly restricted to a monolayer.
A substrate is configured to have a fast-growth surface portion where growth of a Ga atomic layer proceeds at a relatively high rate and a slow-growth surface portion where the growth of the Ga atomic layer proceeds at a relatively low rate. Ga atoms are supplied to the fast-growth surface portion in an amount not less than that which grows one layer of the Group III atoms. Excess Ga atoms on the fast-growth surface portion are allowed to migrate to the slow-growth surface portion by surface migration, thereby growing only one layer of the Ga atoms on the fast-growth surface portion.

REFERENCES:
patent: 4987094 (1991-01-01), Colas et al.
patent: 5714006 (1998-02-01), Kizuki et al.
Maa et al., "Reflectance-differnece spectroscopy study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium and tertiarybutarsine", Applied Physics Letters vol. 58(20) pp. 2261-2263, May 20, 1991.
Usui et al,. "InGaP/GaAs single quantum well structure growth of GaAs facet walls by choride atomic layer epitaxy", Applied Physcis Letters vol. 56 (3) pp. 289-291, Jan. 15, 1990.

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