Fishing – trapping – and vermin destroying
Patent
1996-06-12
1998-01-27
Dang, Trung
Fishing, trapping, and vermin destroying
437 70, 437 24, 437 25, 437 26, H01L 2176
Patent
active
057121869
ABSTRACT:
A method for forming field oxide isolation regions using oxygen implantation is described. An oxidation resistant layer such as silicon nitride is formed on a silicon substrate, and acts as an oxidation mask. An opening is then formed in the nitride layer, where field oxide is desired. In one embodiment of the invention, oxygen is implanted into this opening, followed by thermal oxidation. In a second embodiment of the invention, the opening is thermally oxidized, followed by a deep oxygen implant and anneal. Encroachment of the field oxide under the nitride layer is decreased, resulting in a minimum "birds' beak" length.
REFERENCES:
patent: 4398992 (1983-08-01), Fang et al.
patent: 5182226 (1993-01-01), Jang
patent: 5236862 (1993-08-01), Pfiester et al.
patent: 5294563 (1994-03-01), Rao
patent: 5393693 (1995-02-01), Ko et al.
Nuttall Michael
Pan Pai-Hung
Thakur Randhir P. S.
Dang Trung
Micro)n Technology, Inc.
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