Method for growing epitaxial layers on multiple semiconductor wa

Details Method for growing epitaxial layers on multiple semiconductor wa Method for growing epitaxial layers on multiple semiconductor wa

1976-03-17

1977-12-20

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

118418, 148172, 252 623GA, H01L 21208

Patent

active

040639720

ABSTRACT:
A plurality of single-crystal epitaxial layers of semiconductors are simultaneously grown on a plurality of suitable substrates from the liquid phase by a method which includes the step of consecutively, and at times simultaneously, supplying small portions of liquid solution from a solution reservoir onto all the surfaces of the substrates in a plurality of wells which are provided on a surface of a rotatable circular lower plate so that epitaxial growth can be simultaneously carried out in all wells. The solution reservoir is positioned on a radius of the lower plate on which a circular upper plate is also provided in a non-rotatable state relative to the solution reservoir. Small portions of liquid solution are supplied by rotating the lower plate relative to the upper plate and the solution reservoir, and constrained in shape and volume which are adjusted by the upper plate and the wells. The composition and doping level of epitaxial layers are controlled through vapor-liquid communication.

REFERENCES:
patent: 3631836 (1972-01-01), Jarvela et al.
patent: 3765959 (1973-10-01), Unno et al.
patent: 3809584 (1974-05-01), Akai et al.
patent: 3880680 (1975-04-01), Weyrich et al.
patent: 3881037 (1975-04-01), Grandia et al.
patent: 3909317 (1975-09-01), Itoh et al.
patent: 3933538 (1976-01-01), Akai et al.

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