Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1996-12-18
1999-05-04
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 89, 117105, C30B 2514
Patent
active
059000562
ABSTRACT:
The present invention relates to a method for growing new binary, ternary and quaternary epitaxial layers of III-V compound semiconductors which have the characteristics of low temperature growth, good stability and high-purity, using remote plasma, comprising the steps of converting H.sub.2 and He mixed gas into a plasma state; heating a high-purity of solid source to generate a vaporized source; reacting the vaporized source with H.sub.2 under the H.sub.2 and He plasma environment to produce V-hydrides in situ; introducing the V-hydrides directly into group III source without passing through the plasma; and reacting V-hydrides with group III source on a substrate to form an epitaxial thin layer of III-V compound semiconductors. According to the present invention, high-purity of epitaxial thin layer can be formed at a low temperature, an economical process that does not require an ultrahigh vacuum, a stabilized process that does not need to handle poisonous gas for the reaction with gropu V, and a simple process for manufacturing the various binary, ternary and quaternary compound semiconductor alloys can be provided. Thus, the method of the present invention can be applied to the future information and communication industry, for example, high speed, high frequency optical communication system with (Ga, In, Al)--(As, P, Sb) based on III-V compound semiconductor electronic and optical devices, and the circuitry thereof including heterojunction bipolar transistors, high electron mobility transistors, semiconductor lasers and optical switches.
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Baek Jong-Hyeob
Choi Sung-Woo
Lee Bun
Electronics and Telecommunications Research Institute
Hiteshew Felisa
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