Method for growing epitaxial layers from the liquid phase

Details Method for growing epitaxial layers from the liquid phase Method for growing epitaxial layers from the liquid phase

1974-04-29

1976-02-24

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 118415, H01L 738

Patent

active

039402967

ABSTRACT:
In a method of providing a layer of semiconductor material on a flat side of a substrate from a solution which contains the semiconductor material, the substrate is provided in a recess of a substrate holder which closes the lower side of a reservoir containing the solution. By a relative displacement of the reservoir relative to the substrate holder, the said flat side of the substrate is moved below or away from the solution present in the reservoir. The flat side of the substrate is brought at a desired height relative to the lower side of the reservoir, solution from the reservoir is provided on the substrate and when the reservoir is removed relative to the substrate a quantity of solution of an adjustable height is left on the substrate.

REFERENCES:
patent: 3747562 (1973-07-01), Stone et al.
patent: 3821039 (1973-03-01), Ettenberg

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