Method for growing epitaxial crystal

Details Method for growing epitaxial crystal Method for growing epitaxial crystal

2005-06-06

2008-12-16

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S084000, C117S089000, C117S102000

Reexamination Certificate

active

07465353

ABSTRACT:
It is to provide a method for growing an epitaxial crystal in which the doping conditions are set when an epitaxial crystal having a desired carrier concentration is grown. A method for growing an epitaxial crystal while a dopant is added to a compound semiconductor substrate, comprises: obtaining a relation between an off angle and a doping efficiency with regards to the same type of compound semiconductor substrate in advance; and setting a doping condition for carrying out an epitaxial growth on the compound semiconductor substrate based on the obtained relation and a value of the off angle of the subtrate.

REFERENCES:
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Kondo et al., Journal of Applied Physics, vol. 76, No. 2, Jul. 15, 1994, pp. 914-927.

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