Method for growing diamond crystals utilizing a diffusion fed ep

Details Method for growing diamond crystals utilizing a diffusion fed ep Method for growing diamond crystals utilizing a diffusion fed ep

1991-07-11

1995-07-04

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 84, C30B 2502

Patent

active

054290694

ABSTRACT:
A method for growing diamond crystals or films by diffusing carbon through one side of a carbon diffusable substrate, such as metal or alloy, and outdiffusing the carbon on opposite side of the substrate is disclosed. The requirements for the metal or the alloy medium are: (1) low solubility of carbon in the medium so that all carbon will not be trapped in the medium; (2) no stable compound is formed between carbon and the medium in the operating temperature region; (3) a proximity to the lattice constant of diamond; and (4) an adequate diffusion rate at the operating temperature to grow the diamond efficiently.

REFERENCES:
patent: 4767608 (1988-08-01), Matsumoto et al.
patent: 4927619 (1990-05-01), Touji
patent: 4953499 (1990-09-01), Anthony et al.
patent: 4997636 (1991-03-01), Prins
"Laser Method for Synthesis and Processing of Continuous Diamond Films on Nondiamond Substrates"; Narayan et al.; Science, vol. 252; pp. 416-418.

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