Method for growing crystals of N-type II-VI compound semiconduct

Details Method for growing crystals of N-type II-VI compound semiconduct Method for growing crystals of N-type II-VI compound semiconduct

1994-03-14

1995-06-13

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 88, 117104, 434103, C30B 2504

Patent

active

054232848

ABSTRACT:
A method which permits the growth of high-quality crystals of n-type II-VI compound semiconductors containing sulfur, by suppressing the reaction of a group III or VII element as a dopant with a group II material at low temperature. A raw material gas containing an organometallic material of the group III or organic material of the group VII is premixed with a raw material gas containing organic sulfur material, then the premixture is mixed with a raw material gas containing an organometallic material of the group II, and the mixture is used to grow a crystal of an n-type II-VI compound semiconductor on a semiconductor substrate by a metal organic vapor phase epitaxial growth method.

REFERENCES:
patent: 3519492 (1970-07-01), Humi et al.
patent: 4422888 (1983-12-01), Stutius
patent: 4509997 (1985-04-01), Cockayne et al.
patent: 4636268 (1987-01-01), Tsang
patent: 4830982 (1989-05-01), Dentai et al.
patent: 4876222 (1989-10-01), Luttmer et al.

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