Method for growing crystals of III-V compound semiconductors

Details Method for growing crystals of III-V compound semiconductors Method for growing crystals of III-V compound semiconductors

1975-09-23

1977-01-25

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148171, 252 623GA, H01L 21208

Patent

active

040049531

ABSTRACT:
This invention relates to a method for growing semi-insulating III-V compound semiconductor crystals on a substrate by means of an epitaxially crystallizing process in the liquid state, which comprises the steps of:
A. placing a saturated solution of a III-V compound in a reaction tube,
B. carrying out a heating of the solution in the atmosphere of H.sub.2 gas, and
C. growing a crystal of the III-V compound on the substrate in the liquid phase at a temperature below the melting point of the III-V compound while keeping the vapor pressure of the V Group element under a predetermined value in the reaction tube.

REFERENCES:
patent: 3344071 (1967-09-01), Cronin
patent: 3713900 (1973-01-01), Suzuki

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