Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent
1999-03-25
2000-07-25
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
117 13, 117 15, C30B 3500
Patent
active
060932457
ABSTRACT:
Alkali halide crystal is grown from a melt in a novel graphite crucible which has a surface depth region of its inside surface impregnated with glassy carbon to eliminate porosity, so that the melt does not leak through or wet the carbon. Additionally, the graphite may be coated with glassy carbon to provide a smoother surface. Also disclosed is a porous graphite crucible lined with a layer of graphitic pyrolytic carbon to prevent wetting of the surface by the melt and to permit release of the cooled crystal without remelting.
REFERENCES:
patent: 3854979 (1974-12-01), Rossi
patent: 5476679 (1995-12-01), Lewis et al.
patent: 5656077 (1997-08-01), Kawase
patent: 5911824 (1999-06-01), Hammond et al.
Buzniak Jan J.
Grencewicz Kimberly A.
Hammond David A.
Vukcevich Milan R.
Hiteshew Felisa
Saint-Gobain Industrial Ceramics, Inc.
Ulbrich Volker R.
LandOfFree
Method for growing crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for growing crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for growing crystal will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1333768