Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1997-12-16
1999-06-15
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
117 83, C30B 2102
Patent
active
059118245
ABSTRACT:
Alkali halide crystal is grown from a melt in a novel graphite crucible which has a surface depth region of its inside surface impregnated with glassy carbon to eliminate porosity, so that the melt does not leak through or wet the carbon. Additionally, the graphite may be coated with glassy carbon to provide a smoother surface. Also disclosed is a porous graphite crucible lined with a layer of graphitic pyrolytic carbon to prevent wetting of the surface by the melt and to permit release of the cooled crystal without remelting.
REFERENCES:
patent: 5476679 (1995-12-01), Lewis et al.
patent: 5656077 (1997-08-01), Kawase
Buzniak Jan J.
Grencewicz Kimberly A.
Hammond David A.
Vukcevich Milan R.
Hiteshew Felisa
Saint-Gobain Industrial Ceramics, Inc.
Ulbrich Volker R.
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